论文信息 - Gate-level modeling of leakage current failure induced by total dose for the generation of worst-case test vectors

Gate-level modeling of leakage current failure induced by total dose for the generation of worst-case test vectors

A novel gate-level model has been developed for the automatic generation of worst-case test vectors for leakage current failure induced in CMOS devices by total dose.

A. A. Abou-Auf

[1] H. E. Boesch,et al. Post-Irradiation Effects in Field-Oxide Isolation Structures , 1987, IEEE Transactions on Nuclear Science.

[2] H. A. Eisen,et al. A methodology for the identification of worst-case test vectors for logical faults induced in CMOS circuits by total dose , 1994 .

[3] J. M. Benedetto,et al. Time dependent annealing of radiation-induced leakage currents in MOS devices , 1989 .