论文信息 - Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices - 字舞流文

Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices

C. T. Foxon | Z. Liliental-Weber | J. Denlinger | F. Luckert | R. Martin | K. Yu | W. Walukiewicz | S. Novikov | R. Broesler | I. Demchenko | P. Edwards | C. R. Staddon | M. Hawkridge

[1] C. T. Foxon,et al. Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range , 2009 .

[2] C. T. Foxon,et al. Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content , 2009 .

[3] Joel W. Ager,et al. Valence band hybridization in N-rich GaN1-xAsx alloys , 2004 .

[4] T. Kuech,et al. Epitaxial GaN1−yAsy layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy , 2004 .

[5] C. Tu,et al. Effects of arsenic in gas-source molecular beam epitaxy , 1998 .