Electrical characterization of epitaxial layers

Abstract The techniques for determining the concentrations of donors and acceptors in semiconductor samples from Hall effect and resistivity measurements are described, using measurements on GaAs as an example. Analyses of the temperature variation of the carrier concentration and mobility permit the determination of ND and NA in the range 1 × 1012≲ND+NA≲3 × 1017 cm−3. An empirical curve is derived from the results of these analyses which permits the accurate determination of ND and NA in homogeneous GaAs samples from a single measurement of the Hall coefficient and resistivity at 77 K.

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