论文信息 - A physical large signal Si MOSFET model for RF circuit design

A physical large signal Si MOSFET model for RF circuit design

A new physically based Si MOSFET large signal model, BSIM3v3, developed by UC Berkeley, has been evaluated for high-frequency mixed-signal circuit analysis in a frequency domain, harmonic balance simulator. The model is validated using simulated RF power characteristics of automatic load pull measurement at different bias and matching conditions.

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