$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

We fabricated gallium oxide (Ga₂O₃) Schottky barrier diodes using β-Ga₂O₃ single-crystal substrates produced by the floating-zone method. The crystal quality of the substrates was excellent; the X-ray diffraction rocking curve peak had a full width at half-maximum of 32 arcsec, and the etch pit density was less than 1×10⁴ cm^-2. The devices exhibited good characteristics, such as an ideality factor close to unity and a reasonably high reverse breakdown voltage of about 150 V. The Schottky barrier height of the Pt/β-Ga₂O₃ interface was estimated to be 1.3-1.5 eV.