Silicon Millimeter-Wave Integrated Circuit Technology

A monolithic integrated circuit consists of a semiconductor single-crystal chip containing both active and passive elements and their interconnections. Since the invention of the integrated circuit in 1958 much progress has been made concerning packaging density, power consumption, speed and frequency performance. The concept of Microwave Integrated Circuits (MIC) was inaugurated in 1964. Prior to that nearly all microwave equipment utilized waveguide, coaxial or strip-line circuits. These systems have been costly, large and heavy. Especially for the millimeter-wave region (30–300 GHz) these systems became rather expensive due to the wavelength-determined small size and the necessary highly-precise machine tolerances.

[1]  K.E. Petersen,et al.  Silicon as a mechanical material , 1982, Proceedings of the IEEE.

[2]  A. Colquhoun,et al.  Technology related design of monolithic millimeter-wave Schottky diode mixers , 1992 .

[3]  D. Schroder Semiconductor Material and Device Characterization , 1990 .

[4]  L. J. V. D. Pauw A METHOD OF MEASURING SPECIFIC RESISTIVITY AND HALL EFFECT OF DISCS OF ARBITRARY SHAPE , 1991 .

[5]  T. M. Hyltin,et al.  Microstrip Transmission on Semiconductor Dielectrics , 1965 .

[6]  J. R. Arthur,et al.  Molecular beam epitaxy , 1975 .

[7]  H. Jorke,et al.  Doping by Secondary Implantation , 1986 .

[8]  A. Heuberger X‐ray lithography , 1985 .

[9]  Ludwig Treitinger,et al.  Ultra-Fast Silicon Bipolar Technology , 1988 .

[10]  S. Campbell,et al.  Modeling of Ge-Si heterojunction bipolar transistors for use in silicon monolithic millimeter-wave integrated circuits , 1989 .

[11]  Gabriel M. Rebeiz,et al.  Integrated horn antennas for millimeter-wave applications , 1992, IEEE Antennas & Propagation Magazine.

[12]  J. Luy,et al.  Planar 100 GHz Silicon Detector Circuits , 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

[13]  Burhan Bayraktaroglu Monolithic IMPATT technology , 1989 .

[14]  Tokuo Kure,et al.  A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[15]  S. Sze Semiconductor Devices: Physics and Technology , 1985 .

[16]  U. König Electronic Si/SiGe devices: Basics, technology, performance , 1992 .

[17]  L. P. Hunt,et al.  Handbook of Semiconductor Silicon Technology , 2007 .

[18]  I. Wolff,et al.  Investigations on Air Bridges Used for MMICs in CPW Technique , 1989, 1989 19th European Microwave Conference.

[19]  K. M. Strohm,et al.  90 GHz SIMMWIC Rectennas , 1992, 1992 22nd European Microwave Conference.

[20]  H. Schreiber,et al.  Boron doping of SiGe base of heterobipolar transistors , 1990 .

[21]  E. Kasper Silicon Molecular Beam Epitaxy (Si-MBE) , 1989 .

[22]  Y. Ota Silicon molecular beam epitaxy , 1983 .

[23]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[24]  E. Kasper,et al.  Low Temperature Molecular Beam Epitaxy of Silicon (Si-MBE) , 1989 .

[25]  W. R. Runyan Semiconductor Measurements and Instrumentation , 1975 .

[26]  Minoru Nakamura,et al.  A sub-30 psec Si bipolar LSI technology , 1988, Technical Digest., International Electron Devices Meeting.

[27]  U. Erben,et al.  MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/ , 1992, IEEE Electron Device Letters.

[28]  A. Rosen,et al.  Optically controlled lateral PIN diodes and microwave control circuits , 1986 .

[29]  D. Elliott Integrated Circuit Fabrication Technology , 1982 .

[30]  O. P. Daga,et al.  Air bridge and via hole technology for GaAs based microwave devices , 1988 .

[31]  G. K. Reeves,et al.  Obtaining the specific contact resistance from transmission line model measurements , 1982, IEEE Electron Device Letters.

[32]  D. Harame,et al.  75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors , 1990, IEEE Electron Device Letters.

[33]  J. Buechler,et al.  Silicon high-resistivity-substrate millimeter-wave technology , 1986, IEEE Transactions on Electron Devices.

[34]  Horst Kibbel,et al.  91 GHz SiGe HBTs grown by MBE , 1993 .

[35]  S. Sze High-speed semiconductor devices , 1990 .

[36]  D. N. McQuiddy,et al.  Monolithic Microwave Integrated Circuits: An Historical Perspective , 1984 .

[37]  D. Manos,et al.  Plasma etching : an introduction , 1989 .

[38]  S. P. Emmons,et al.  Optimization of Diode Structures for Monolithic Integrated Microwave Circuits , 1968 .

[39]  U. Guttich,et al.  D-band subharmonic mixer with silicon planar doped barrier diodes , 1991 .

[40]  H. Linde,et al.  Wet Silicon Etching with Aqueous Amine Gallates , 1992 .

[41]  A. Rosen,et al.  Silicon as a Millimeter-Wave Monolithically Integrated Substrate - A New Look , 1981 .

[42]  J. Poate Diffusion and reactions in gold films , 1981 .

[43]  A. Rosen,et al.  Millimeter Wave Silicon Device and Integrated Circuit Technology , 1984 .

[44]  E. Kasper,et al.  An Industrial Single‐Slice Si‐MBE Apparatus , 1989 .

[45]  A. Rosen,et al.  Millimeter-Wave Device Technology , 1982 .