论文信息 - Structure properties of cubic-AlN grown by reactive gas-timing rf magnetron sputtering

Structure properties of cubic-AlN grown by reactive gas-timing rf magnetron sputtering

The structure properties of aluminum nitride (AlN) thin films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Using rf magnetron sputtering, the reactive gas-timing technique was successfully applied to grow cubic-AlN thin films. The XRD patterns of all deposited AlN films showed orientation of cubic structure in [111] and [200] planes. The lattice constant and grain size were calculated and correlated with the flow rate of N/sub 2/ gas. The FESEM images showed the surface morphology of nano-particles. The nanocrystalline AlN particle sizes increased with increasing flow rate of N/sub 2/.

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