Current sense amplifying circuit in semiconductor memory device

The current sense amplifier circuit suitable for use in the non-volatile memory devices such as magnetic random access memory is disclosed. Such current reference memory cells for sensing the sense amplifier circuit is implemented without the need to be created separately with the same memory cell and the normal memory cell. A current sense amplifier circuit according to the invention is covalently bonded to the first and second cross-coupling made up of a differential amplifier, the reference sensing current mirror without the operation for the generation of electric current, the sensing relative to the current flowing through the sensing nodes of the memory cell node It compares the current flow directly.