Charge separation in bipolar transistors
暂无分享,去创建一个
Daniel M. Fleetwood | W. E. Combs | S. L. Kosier | S. Kosier | D. Fleetwood | W. Combs | R. N. Nowlin
[1] Jean-Jacques Hajjar,et al. XFCB: a high speed complementary bipolar process on bonded SOI , 1992, Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting.
[2] Daniel M. Fleetwood,et al. Theory and application of dual-transistor charge separation analysis , 1989 .
[3] G. Groeseneken,et al. A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.
[4] Arthur R. Hart,et al. Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures , 1978, IEEE Transactions on Nuclear Science.
[5] R. Pease,et al. Total Dose Effects in Recessed Oxide Digital Bipolar Microcircuits , 1983, IEEE Transactions on Nuclear Science.
[6] V. Reddi. Influence of surface conditions on silicon planar transistor current gain , 1967 .
[7] K. F. Galloway,et al. A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics , 1984, IEEE Transactions on Nuclear Science.
[8] P. Winokur,et al. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .
[9] R. L. Pease,et al. Long term ionization response of several BiCMOS VLSIC technologies , 1991 .
[10] E. W. Enlow,et al. Response of advanced bipolar processes to ionizing radiation , 1991 .
[11] Mechanisms of ionizing-radiation-induced degradation in modern bipolar devices , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
[12] R. L. Pease,et al. Trends in the total-dose response of modern bipolar transistors , 1992 .
[13] A. S. Grove. Physics and Technology of Semiconductor Devices , 1967 .