A 0.168/spl mu/m/sup 2//0.11/spl mu/m/sup 2/ highly scalable high performance embedded DRAM cell for 90/65-nm logic applications
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T. Kirihata | S.S. Iyer | J. Liu | B. Khan | N. Robson | Y. Otani | J. Norum | G. Wang | P. Parries
[1] John K. DeBrosse,et al. The evolution of IBM CMOS DRAM technology , 1995, IBM J. Res. Dev..