Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires

A scaling-down of feature sizes into the nanometer range is a common trend in silicon and compound semiconductor advanced devices. That this trend will continue is clearly evidenced by the fact that the “roadmap” for the Si ultralarge-scale-integration circuit (USLI) industry targets production-level realization of a 70-nm minimum feature size for the year 2010. GaAs- and InP-based heterostructure devices such as high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have made remarkable progress by miniaturization, realizing ultrahigh speeds approaching the THz range with ultralow power consumption. Due to progress in nanofabrication technology, feature sizes of scaled-down transistors are rapidly approaching the Fermi wavelength of electrons in semiconductors, even at the production level. This fact may raise some concerns about the operation of present-day devices based on semiclassical principles. However, the progress of nanofabrication technology has opened up the exciting possibility of constructing novel quantum devices, based directly on quantum mechanics, by utilizing artificial structures such as quantum wells, wires, and dots. In these structures, new physical effects appear, such as the formation of new quantum states in single and coupled quantum structures, artificial miniband formation in superlattices, tunneling and resonant tunneling in single and multiple barriers, propagation of phase-coherent guided electron waves in quantum wires, conductance oscillations in small tunnel junctions due to single-electron tunneling, and so on. We expect that these effects will offer rich functionality in next-generation semiconductor quantum ULSIs based on artificial quantum structures, with feature sizes in the range of one to a few tens of nanometers. Beyond this, molecular-level ULSIs using exotic materials and various chemical and electrochemical processes other than the standard semiconductor ones may appear, butat present, they still seem to be too far in the future for realistic consideration for industrial applications.

[1]  H. Hasegawa,et al.  Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates , 1999 .

[2]  H. Hasegawa,et al.  Quantum transport in a Schottky in-plane-gate controlled GaAs/AlGaAs quantum well wires , 1996 .

[3]  Seiya Kasai,et al.  Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas , 1997 .

[4]  H. Fukuyama,et al.  Effects of Long-Range Coulomb Interaction on Resistivity of a Quantum Wire , 1993 .

[5]  Ogata,et al.  Collapse of quantized conductance in a dirty Tomonaga-Luttinger liquid. , 1994, Physical review letters.

[6]  Hideki Hasegawa,et al.  Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates , 1997 .

[7]  R. A. Smith,et al.  A silicon Coulomb blockade device with voltage gain , 1997 .

[8]  J. Martinis,et al.  Voltage gain in the single‐electron transistor , 1992 .

[9]  H. Hasegawa,et al.  A novel wrap-gate-controlled single electron transistor formed on an InGaAs ridge quantum wire grown by selective MBE , 1998 .

[10]  H. Hasegawa,et al.  Direct formation of InGaAs coupled quantum wire–dot structures by selective molecular beam epitaxy on InP patterned substrates , 1998 .

[11]  M. Kawabe Selective growth and other applications of hydrogen-assisted molecular beam epitaxy , 1995 .

[12]  H. Sakaki,et al.  Modulation of one‐dimensional electron density in n‐AlGaAs/GaAs edge quantum wire transistor , 1994 .

[13]  Hwang,et al.  Stimulated emission in semiconductor quantum wire heterostructures. , 1989, Physical review letters.

[14]  H. Hasegawa,et al.  Selective molecular beam epitaxy growth of quantum wire–dot coupled structures with novel high index facets for InGaAs single electron transistor arrays , 1999 .

[15]  H. Hasegawa,et al.  Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets , 1996 .

[16]  H. Hasegawa,et al.  Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K , 1996 .

[17]  A. Madhukar,et al.  In situ approach to realization of three‐dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates , 1993 .

[18]  T. Hashizume,et al.  Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process , 1995 .

[19]  H. Hasegawa,et al.  Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires , 1997 .

[20]  Kazuhiko Matsumoto,et al.  Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system , 1996 .

[21]  Williamson,et al.  Quantized conductance of point contacts in a two-dimensional electron gas. , 1988, Physical review letters.

[22]  T. Honda,et al.  Reduction of quantized conductance at low temperatures observed in 2 to 10 μm-long quantum wires , 1995 .

[23]  Takashi Fukui,et al.  Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition , 1990 .