Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation
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John D. Cressler | Jeffrey H. Warner | Ickhyun Song | Moon-Kyu Cho | Ani Khachatrian | Stephen P. Buchner | Dale McMorrow | Pauline Paki | Fleetwood E. Zachary
[1] W. T. Holman,et al. Effects of Guard Bands and Well Contacts in Mitigating Long SETs in Advanced CMOS Processes , 2007, IEEE Transactions on Nuclear Science.
[2] J. Cressler. Silicon Heterostructure Handbook : Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy , 2005 .
[3] Shoichi Masui,et al. Experimental results and modeling techniques for substrate noise in mixed-signal integrated circuits , 1993 .
[4] John D. Cressler,et al. Experimental Validation of an Equivalent LET Approach for Correlating Heavy-Ion and Laser-Induced Charge Deposition , 2018, IEEE Transactions on Nuclear Science.
[5] David M. Fleischhauer,et al. Evaluating the Effects of Single Event Transients in FET-Based Single-Pole Double-Throw RF Switches , 2014, IEEE Transactions on Nuclear Science.
[6] Ming-Dou Ker,et al. Design of Power-Rail ESD Clamp Circuit With Ultra-Low Standby Leakage Current in Nanoscale CMOS Technology , 2009, IEEE J. Solid State Circuits.
[7] F. Miller,et al. Effects of beam spot size on the correlation between laser and heavy ion SEU testing , 2004, IEEE Transactions on Nuclear Science.
[8] B.L. Bhuva,et al. Design Techniques to Reduce SET Pulse Widths in Deep-Submicron Combinational Logic , 2007, IEEE Transactions on Nuclear Science.
[9] A.F. Witulski,et al. Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology , 2007, IEEE Transactions on Nuclear Science.
[10] S. Buchner,et al. Correlation of Pulsed-Laser Energy and Heavy-Ion LET by Matching Analog SET Ensemble Signatures and Digital SET Thresholds , 2013, IEEE Transactions on Nuclear Science.
[11] B. Narasimham,et al. Quantifying the Reduction in Collected Charge and Soft Errors in the Presence of Guard Rings , 2008, IEEE Transactions on Device and Materials Reliability.
[12] M Poizat,et al. Proton-Induced Mobility Degradation in FinFETs With Stressor Layers and Strained SOI Substrates , 2011, IEEE Transactions on Nuclear Science.
[13] Zachary E. Fleetwood,et al. An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology , 2018, IEEE Transactions on Nuclear Science.
[14] John D. Cressler,et al. Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs , 2017, IEEE Transactions on Nuclear Science.
[15] Adrian Ildefonso,et al. On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients , 2017, IEEE Transactions on Nuclear Science.
[16] D. McMorrow,et al. Demonstration of single-event effects induced by through-wafer two-photon absorption , 2004, IEEE Transactions on Nuclear Science.
[17] David F. Heidel,et al. Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements , 2009, IEEE Transactions on Nuclear Science.
[18] V. Pouget,et al. Pulsed-Laser Testing for Single-Event Effects Investigations , 2013, IEEE Transactions on Nuclear Science.
[19] L.W. Massengill,et al. Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design , 2005, IEEE Transactions on Nuclear Science.
[20] John D. Cressler,et al. An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier , 2016, IEEE Transactions on Nuclear Science.
[21] M. Ker. Whole-chip ESD protection design with efficient VDD-to-VSS ESD clamp circuits for submicron CMOS VLSI , 1999 .
[22] A.F. Witulski,et al. HBD layout isolation techniques for multiple node charge collection mitigation , 2005, IEEE Transactions on Nuclear Science.
[23] O. Faynot,et al. Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices , 2005, IEEE Transactions on Nuclear Science.
[24] M. J. Howes,et al. Reliability and degradation : semiconductor devices and circuits , 1981 .