Hybrid 3 GHz Class-E Amplifier with High-Voltage GaAs-HBT

This paper reports on design methodology and realization of a class?E power amplifier (PA) at 3 GHz using a flipchip- mounted high-voltage GaAs HBT. The circuit achieves 39 dBm output power and 61 % PAE, corresponding to a collector efficiency as high as 79 %. In addition to the large-signal simulation aspects, we discuss particularly the problem of the practical realization of the circuit, especially avoiding parasitics by the package.