论文信息 - 10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure

10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure

The development of waveguide avalanche photodiodes with a very thin 0.1 /spl mu/m multiplication layer for use in high-speed, high-sensitivity, low-voltage-operation receivers is presented. A /spl eta/=76% a GB product of 180 GHz. And a breakdown voltage Vb of 15 V were obtained. The 10 Gbit/s bit error rate measurement showed a sensitivity of -28 dBm (BER 10/sup -9/, PRBS 2/sup 23/-1), which is the highest sensitivity yet reported for APD receivers.

[1] R. C. Tozer,et al. Low excess noise characteristics in thin avalanche region GaAs diodes , 1998 .

[2] L. D. Tzeng,et al. A high-sensitivity APD receiver for 10-Gb/s system applications , 1996, IEEE Photonics Technology Letters.

[3] J.C. Campbell,et al. Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product , 1998, IEEE Photonics Technology Letters.

[4] Toshitaka Torikai,et al. InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 [micro sign]m for high-speed and low-voltage-operation optical receiver , 2000 .

[5] J. P. Praseuth,et al. Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160 GHz , 1997 .

[6] K. Makita,et al. 10-gigabit-per-second high-sensitivity and wide-dynamic-range APD-HEMT optical receiver , 1996, IEEE Photonics Technology Letters.

[7] J.C. Campbell,et al. Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz , 1999, IEEE Photonics Technology Letters.