论文信息 - High-Temperature Empirical Modeling for the I-V Characteristics of GaN150-Based HEMT

High-Temperature Empirical Modeling for the I-V Characteristics of GaN150-Based HEMT

We describe in this paper a model for the I-V characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) working in high-temperature environments up to 250°C. Modeling of this emerging technology is a very significant step toward incorporating the technology in harsh environment applications. An extended version of the Angelov model is modified in this paper to consider the temperature as a variable. The developed model is fitted to the experimental I-V data using MATLAB. The reported experimental data are in good agreement with the model outputs over the specified temperature range. Moreover, the model was validated using the Spectre circuit simulator.

[1] L. I. Babak,et al. Methodology of built and verification of non-linear EEHEMT model for GaN HEMT transistor , 2015 .

[2] Hao Zhang. Physics Based Virtual Source Compact Model of Gallium-Nitride High Electron Mobility Transistors , 2017 .

[3] J. Wilde,et al. Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices , 2015, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[4] Ujwal Radhakrishna. A compact transport and charge model for GaN-based high electron mobility transistors for RF applications , 2013 .

[5] Christian Dua,et al. Testing the Temperature Limits of GaN-Based HEMT Devices , 2010, IEEE Transactions on Device and Materials Reliability.

[6] Thomas Zimmer,et al. Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design , 2013, IEEE Transactions on Electron Devices.

[7] I. Angelov,et al. Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .

[8] P. Neudeck,et al. High-temperature electronics - a role for wide bandgap semiconductors? , 2002, Proc. IEEE.

[9] W. Marsden. I and J , 2012 .