PHOTOVOLTAIC EFFECT IN PbxSn1−xTe DIODES

Photovoltaic response has been observed in p‐n junctions of PbxSn1−xTe at wavelengths up to 9.5 μ at 77°K and up to 12 μ at 12°K. These results together with previous photoluminescence data and the proposed model for the band structure of PbxSn1−xTe (ref. 1) indicate that these alloys have considerable potential for efficient infrared detection throughout the 8 to 14 μ atmospheric window and well beyond.