论文信息 - Low temperature GaAs/Si direct wafer bonding

Low temperature GaAs/Si direct wafer bonding

GaAs-Si low temperature bonding has been achieved using spin-on-glass as the intermediate layer. Interface energies of ~1.7 J/m2 were obtained after thermal annealing at only 200°C. The interface energy is sufficiently high to allow thinning of the GaAs wafer down to 5–10 µm.

M. Reiche | U. Gösele | V. Dragoi | M. Alexe

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