Physics-based electron device modelling and computer-aided MMIC design
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[1] Yuji Ando,et al. DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics , 1990 .
[2] Christopher M. Snowden,et al. Quasi-two-dimensional MESFET simulations for CAD , 1989 .
[3] F. Ponse,et al. Device-physics model and equivalent circuit model for GaAs MESFETs , 1987 .
[4] Robert J. Trew,et al. A large-signal, analytic model for the GaAs MESFET , 1988 .
[5] Yongcai Hu,et al. Nonlinear analysis of microwave FET oscillators using Volterra series , 1989 .
[6] Hermann A. Haus,et al. Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect-Transistors , 1975 .
[7] V. A. Monaco,et al. Network sensitivities in terms of scattering parameters , 1971 .
[8] Determination of the Electrode Capacitance Matrix for GaAs FET's , 1980 .
[9] Heinrich Daembkes,et al. Modulation-doped field-effect transistors : principles, design, and technology , 1991 .
[10] Y.-K. Feng,et al. New ν(E) relationship for GaAs , 1985 .
[11] John W. Bandler,et al. Nonlinear circuit optimization with dynamically integrated physical and device models , 1990, IEEE International Digest on Microwave Symposium.
[12] G. Ghione,et al. Self-consistent thermal modelling of GaAs MESFET's: a comparative analysis of power device mountings , 1988 .
[13] P. de Santis,et al. Extension of Existing Models to Ion-Implanted MESFET's , 1980 .
[14] Giovanni Ghione,et al. Physical modeling of GaAs MESFETs in an integrated CAD environment: from device technology to microwave circuit performance , 1989 .
[15] E. Constant,et al. Modeling of a submicrometer gate field‐effect transistor including effects of nonstationary electron dynamics , 1980 .
[16] W. Baechtold,et al. Noise behavior of GaAs field-effect transistors with short gate lengths , 1972 .
[17] Thomas W. Sigmon,et al. A process and device model for GaAs MESFET technology: GATES , 1989, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[18] N. A. Masnari,et al. Deep-level and profile effects upon low-noise ion-implanted GaAs MESFET's , 1985, IEEE Transactions on Electron Devices.
[19] H. Kodera,et al. Drain conductance of junction gate FET's in the hot electron range , 1976, IEEE Transactions on Electron Devices.
[20] Giorgio Vannini,et al. Mathematical approach to large-signal modelling of electron devices , 1991 .
[21] K. Hess. Advanced Theory of Semiconductor Devices , 1999 .
[22] A. Cappy,et al. Noise modeling and measurement techniques (HEMTs) , 1988 .
[23] P. Ladbrooke,et al. Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies , 1988 .
[24] John W. Bandler,et al. Integrated physics-oriented statistical modeling, simulation, and optimization (MESFETs) , 1992 .
[25] Michael J. Howes,et al. A large-signal physical MESFET model for computer-aided design and its applications , 1989 .
[26] P. H. Ladbrooke,et al. The role of the device surface in the high voltage behaviour of the GaAs MESFET , 1986 .
[27] R. J. Gilmore,et al. Yield optimization of a MMIC distributed amplifier using physically-based device models , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.
[28] J.A. Higgins. Modeling the influence of carrier profiles on MESFET characteristics , 1980, IEEE Transactions on Electron Devices.
[29] B. F. Oscillator. Large-Signal Analysis of a Silicon Read Diode Oscillator , 1969 .
[30] David E. Root,et al. Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device Data , 1991, 1991 21st European Microwave Conference.
[31] D. Pasquet,et al. A new analytical model for the GaAs MESFET in the saturation region , 1988 .
[32] C. Rauscher,et al. A Technique for Predicting Large Signal Performance of a GaAs MESFET , 1978, 1978 IEEE-MTT-S International Microwave Symposium Digest.
[33] Giovanni Ghione. A two-dimensional approach to the noise simulation of GaAs MESFETs , 1990, ESSDERC '90: 20th European Solid State Device Research Conference.
[34] Franco Mastri,et al. General-purpose harmonic balance analysis of nonlinear microwave circuits under multitone excitation , 1988 .
[35] S. Asai,et al. Two-dimensional numerical analysis of stability criteria of GaAs FET's , 1976, IEEE Transactions on Electron Devices.
[36] R. Anholt,et al. Statistical analysis of GaAs MESFET S-parameter equivalent-circuit models , 1991 .
[37] G. Haddad,et al. Quasi-two-dimensional modeling of GaAs MESFET's , 1987, IEEE Transactions on Electron Devices.
[38] J. P. Nougier,et al. Noise and Diffusion of Hot Carriers , 1980 .
[39] Marco Pirola,et al. Physical simulation: a tool for technological evaluation and optimization of GaAs MESFET devices , 1990 .
[40] M. S. Mock,et al. Analysis of mathematical models of semiconductors devices , 1983 .
[41] H. A. Willing,et al. Simulation of Nonlinear Microwave FET Performance Using a Quasi-Static Model , 1979 .
[42] Qi-Jun Zhang,et al. Efficient large-signal FET parameter extraction using harmonics , 1989, IEEE MTT-S International Microwave Symposium Digest.
[43] R.L. Kuvas,et al. Equivalent circuit model of FET including distributed gate effects , 1980, IEEE Transactions on Electron Devices.
[44] John E. Purviance,et al. CAD for statistical analysis and design of microwave circuits , 1991 .
[45] Athanasios Papoulis,et al. Probability, Random Variables and Stochastic Processes , 1965 .
[46] F. J. Rosenbaum,et al. A Large-Signal Model for the GaAs MESFET , 1981 .
[47] H. Gummel,et al. Large-signal analysis of a silicon Read diode oscillator , 1969 .
[48] John W. Bandler,et al. A unified theory for frequency-domain simulation and sensitivity analysis of linear and nonlinear circuits , 1988 .
[49] Y.-K. Feng,et al. Simulation of submicrometer GaAs MESFET's using a full dynamic transport model , 1988 .
[50] H. Fukui. Optimal noise figure of microwave GaAs MESFET's , 1979, IEEE Transactions on Electron Devices.
[51] Giovanni Ghione,et al. Physical noise modelling of majority-carrier devices: an adjoint-network approach , 1989, International Technical Digest on Electron Devices Meeting.
[52] Ingo Wolff,et al. Large-signal modeling and simulation of GaAs-MESFETs and HFETs , 1992 .
[53] William Shockley,et al. The Impedance Field Method of Noise Calculation in Active Semiconductor Devices , 1966 .
[54] John W. Bandler,et al. Gradient quadratic approximation scheme for yield-driven design , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.
[55] Fabrizio Bonani,et al. A CAD-oriented quasi-physical HEMT noise model for device design and optimization , 1992 .
[56] J. Nougier. Origine du bruit dans les dispositifs à semiconducteurs , 1987 .
[57] Stephen A. Maas,et al. Nonlinear microwave circuits , 1988 .
[58] Paolo Tiberio,et al. Computer-Aided Analysis of Microwave Circuits , 1974 .
[59] C.S. Chang,et al. Analytic theory for current-voltage characteristics and field distribution of GaAs MESFET's , 1989 .
[60] Robert G. Meyer,et al. Computationally efficient electronic-circuit noise calculations , 1971 .
[61] John W. Bandler,et al. Circuit optimization: the state of the art , 1988 .
[62] Giovanni Ghione,et al. MESS - A two-dimensional physical device simulator and its application to the development of C--band power GaAs MESFETs , 1988 .
[63] W. Heinrich,et al. Wave Propagation on MESFET Electrodes and its Influence on Transistor Gain , 1987 .
[64] J. Frey,et al. Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's , 1982, IEEE Transactions on Electron Devices.
[65] C. Snowden,et al. Two-dimensional hot-electron models for short-gate-length GaAs MESFET's , 1987, IEEE Transactions on Electron Devices.
[66] J. Purviance,et al. FET model statistics and their effects on design centering and yield prediction for microwave amplifiers , 1988, 1988., IEEE MTT-S International Microwave Symposium Digest.
[67] M.S. Shur. Analytical model of GaAs MESFET's , 1978, IEEE Transactions on Electron Devices.
[68] V. A. Monaco,et al. A nonlinear integral model of electron devices for HB circuit analysis , 1992 .
[69] J. M. King,et al. Relationship between process and materials variations and variations in S‐ and equivalent‐circuit parameters , 1991 .
[70] D. Pattanayak,et al. A numerical approach to modeling the ultrashort-gate MESFET , 1982, IEEE Transactions on Electron Devices.
[71] E. Constant,et al. Noise modeling in submicrometer-gate FET's , 1981, IEEE Transactions on Electron Devices.
[72] R. H. Jansen,et al. The Spectral-Domain Approach for Microwave Integrated Circuits , 1985 .
[73] L. Forbes,et al. An analytical self-backgating GaAs MESFET model including deep-level trap effects , 1989, International Technical Digest on Electron Devices Meeting.
[74] Yong-Hoon Yun,et al. A temperature model for the GaAs MESFET , 1981, IEEE Transactions on Electron Devices.
[75] Giovanni Ghione,et al. High-resolution self-consistent thermal modelling of multi-gate power GaAs MESFETs , 1989, International Technical Digest on Electron Devices Meeting.
[76] C. C. Moglestue,et al. A Self-Consistent Monte Carlo Particle Model to Analyze Semiconductor Microcomponents of any Geometry , 1986, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[77] K. Blotekjaer. Transport equations for electrons in two-valley semiconductors , 1970 .
[78] R. Rohrer,et al. Automated Network Design-The Frequency-Domain Case , 1969 .
[79] C. M. Snowden,et al. MICROWAVE AND MILLIMETER-WAVE DEVICE AND CIRCUIT-DESIGN BASED ON PHYSICAL MODELING , 1991 .
[80] D. Gasquet,et al. Noise of GaAs Diodes , 1988, ESSDERC '88: 18th European Solid State Device Research Conference.
[81] Roberto Guerrieri,et al. Sensitivity Analysis for Device Design , 1987, ESSDERC '87: 17th European Solid State Device Research Conference.
[82] J. E. Purviance,et al. A linear statistical FET model using principal component analysis , 1989 .
[83] G. Nuzillat,et al. Saturation mechanism in 1-µm gate GaAs FET with channel—Substrate interfacial barrier , 1980, IEEE Transactions on Electron Devices.
[84] Giovanni Ghione,et al. A computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[85] Jeffrey Frey,et al. Effects of velocity overshoot on performance of GaAs devices, with design information , 1983 .
[86] John R. Hauser,et al. Two-dimensional Monte Carlo simulation of a submicron GaAs MESFET with a nonuniformly doped channel , 1985 .
[87] W. Curtice. GaAs MESFET modeling and nonlinear CAD , 1988 .
[88] R. Minasian. Large signal GaAs m.e.s.f.e.t. model and distortion analysis , 1978 .
[89] J. Graffeuil,et al. The influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers , 1988 .
[90] J. J. Bussgang,et al. Analysis of nonlinear systems with multiple inputs , 1974 .
[91] T.M. Brookes,et al. The noise properties of high electron mobility transistors , 1986, IEEE Transactions on Electron Devices.
[92] J. Graffeuil,et al. Semiempirical expression for direct transconductance and equivalent saturated velocity in short-gate-length MESFETs , 1982 .
[93] R.H. Jansen,et al. Nonlinear Distributed Modelling of Multifinger FETs/HEMTs in Terms of Layout Geometry and Process Data , 1991, 1991 21st European Microwave Conference.
[94] Giovanni Ghione,et al. Modelling and Simulation of Wave Propagation Effects in MESFET Devices based on Physical Models , 1987, ESSDERC '87: 17th European Solid State Device Research Conference.
[95] W. Curtice,et al. Direct comparison of the electron-temperature model with the particle-mesh (Monte-Carlo) model for the GaAs MESFET , 1982, IEEE Transactions on Electron Devices.