Prototyping and Characterization of 1.2KV SIC Schottky Diodes for TWTA Application: The Challenge to Meet the User Specification

Benefits based on the main features of SiC base material (high energy gap, high electric field breakdown in combination with reasonably high electron mobility and high thermal conductivity 3 times higher than Si -) led to the following expected and in some cases already proven capabilities for power application: low on-state voltage (100 to 200 times lower on resistance x total gate charge with respect to Si), low leakage currents (order of magnitude lower than in Si devices), low recovery charge, fast turn-on and turn-off, high blocking voltage (> 2 KV), high power density [1-2]. Higher reliable operating junction temperature have been also demonstrated above 300°C [3-4].