Interface and growth studies of α‐Sn/CdTe(110) superlattices

Angular‐resolved synchrotron radiation photoemission spectroscopy and reflection high‐energy electron diffraction (RHEED) are used to study the molecular‐beam epitaxy of CdTe/ α‐Sn(110) interfaces and superlattices. Core level photoemission spectra indicate that both sides of the interface are stable, nonreactive, and abrupt for growth temperatures up to 100 °C. At the α‐Sn/CdTe interface, the valence band maximum at Γ is at EV=1.1 eV below the Fermi level. This gives a valence band offset of ΔEV=1.1 eV, assuming zero band gap for the Sn. Stable superlattices of α‐Sn/CdTe(110) have been grown at 100 °C. The surface quality of the superstructure degrades after the growth of several α‐Sn/CdTe periods. After the growth of ten periods each 50‐A thick, the RHEED pattern shows mainly three‐dimensional bulk diffraction, indicating increased surface, and interface roughness.