Prediction, simulation, and verification of the phase noise in 80-MHz low-phase-noise crystal oscillators

To predict the phase noise in an 80-MHz crystal oscillator, on the basis of the classical Leeson model, we analyzed and selected the oscillator noise figure F and transistor corner frequency fc reasonably, and then calculated the loaded Q (QL) value of the oscillator according to the parameters in the selected Butler oscillation circuit. Thus, we obtained the predicted phase noise in an 80-MHz crystal oscillator according to the Leeson phase noise formula. Next, the simulation curve of the phase noise in this 80-MHz low-phase-noise crystal oscillator was obtained by establishing a transistor nonlinear model using commercial design software. Then, we debugged the 80MHz low-phase-noise crystal oscillator prototype under the guidance of the prediction and simulation results and tested it. The measured results show that the phase noise predicted after selecting reasonable parameters for the Leeson model and the ADS simulation curve of the phase noise obtained by using the nonlinear transistor model are both close to the actual measured result. This result may be beneficial in simplifying the design process for low-phase-noise crystal oscillators.