论文信息 - Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy - 字舞流文

Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy

J. B. Kuang | P. Tasker | L. Eastman | H. Hier | O. Aina | G. W. Wang | A. Fathimulla | Y. Chen