Impact ionization in GaAs MESFETs
暂无分享,去创建一个
[1] J. David,et al. Gate-drain avalanche breakdown in GaAs power MESFET's , 1982, IEEE Transactions on Electron Devices.
[2] T. M. Barton,et al. Dependence of maximum gate-drain potential in GaAs MESFET's upon localized surface charge , 1985, IEEE Electron Device Letters.
[3] Thomas P. Pearsall,et al. The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs , 1978 .
[4] T.Y. Chan,et al. Dependence of channel electric field on device scaling , 1985, IEEE Electron Device Letters.
[5] W. Frensley,et al. Power-limiting breakdown effects in GaAs MESFET's , 1981, IEEE Transactions on Electron Devices.
[6] C. Hu,et al. A simple method to characterize substrate current in MOSFET's , 1984, IEEE Electron Device Letters.