Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

We present the room temperature operation of a vertical tunneling field-effect transistor using a stacked double bilayer graphene (BLG) and hexagonal boron nitride heterostructure. The device shows two tunneling resonances with negative differential resistance (NDR). An analysis of the electrostatic potential drop across the heterostructure indicates the resonances are associated with the relative alignment of the lower or upper bands of the two BLG. Using the NDR characteristic of the device, one-transistor latch or SRAM operation is demonstrated. The device characteristics are largely insensitive to temperature from 1.5 to 300 K.

[1]  Andre K. Geim,et al.  Raman spectrum of graphene and graphene layers. , 2006, Physical review letters.

[2]  N. Peres,et al.  Electron tunneling through ultrathin boron nitride crystalline barriers. , 2012, Nano letters.

[3]  SUPARNA DUTTASINHA,et al.  Van der Waals heterostructures , 2013, Nature.

[4]  N. Peres,et al.  Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures , 2011, Science.

[5]  D. Jena,et al.  Single-particle tunneling in doped graphene-insulator-graphene junctions , 2011, 1108.4881.

[6]  K. Novoselov,et al.  Resonant tunnelling and negative differential conductance in graphene transistors , 2013, Nature Communications.

[7]  K. L. Shepard,et al.  One-Dimensional Electrical Contact to a Two-Dimensional Material , 2013, Science.

[8]  Kenji Watanabe,et al.  Chemical potential and quantum Hall ferromagnetism in bilayer graphene , 2014, Science.

[9]  Gong Gu,et al.  SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor , 2012, IEEE Transactions on Electron Devices.

[10]  D. N. Basov,et al.  Determination of the electronic structure of bilayer graphene from infrared spectroscopy , 2008, 0809.1898.

[11]  N. Peres,et al.  Electron tunneling through ultrathin boron nitride crystalline barriers. , 2012, Nano letters.

[12]  A. Geim,et al.  Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. , 2014, Nature nanotechnology.

[13]  Jun Lou,et al.  Large scale growth and characterization of atomic hexagonal boron nitride layers. , 2010, Nano letters.

[14]  S. Banerjee,et al.  Gate-tunable resonant tunneling in double bilayer graphene heterostructures. , 2014, Nano letters.