Photodiodes with selective sensibility for control and space orientation of optoelectron systems

A selective photodiode with a 2D sensibility (diode-quadrant), prepared on In1-xGaxAs1-yPy by liquid phase epitaxy, is presented in this article. The diode quadrant has a circular form and consists of five photoactive elements: four for the determination of incident signal position and the fifth- a protective peripheral ring. The structure is optimized for the wavelength (lambda) equals 1.064 micrometers . The main parameters are: photosensibility spectrum half-width approximately 60 nm; the maximum photosensibility is S(lambda ) equals 1.064 equals 0.58 - 0.61 AW; external quantum efficiency is 67 - 71%; coordinate characteristic abruptness is K equals 104 V/(W-mm).