High injection in a two-dimensional transistor

A generally accepted theory for bipolar transistors operated at high current densities has not yet been established. Controversy exists as to whether high current Performance is affected primarily by vertical or lateral phenomena. This paper solves the high injection problem by means of a two-dimensional numerical algorithm. The results of some calculations pertaining to a particular example show that base push-out is clearly the dominating mechanism. Emitter crowding caused by lateral majority-carrier current flow in the active base is moderated by base conductivity modulation; it is, however, not negligible. The major limitation of the present work results from the fact that high doping effects are not considered. Thus accurate h FE predictions cannot be given.

[1]  H. G. Weinstein,et al.  Simultaneous Solution of Multiphase Reservoir Flow Equations , 1970 .

[2]  P. E. Gray,et al.  Static V-I relationships in transistors at high injection levels , 1966 .

[3]  M. Mock.  A two-dimensional mathematical model of the insulated-gate field-effect transistor , 1973 .

[4]  Robert Mertens,et al.  Calculation of the emitter efficiency of bipolar transistors , 1973 .

[5]  H. Gummel,et al.  Large-signal analysis of a silicon Read diode oscillator , 1969 .

[6]  D. C. Agouridis,et al.  The cutoff frequency falloff in UHF transistors at high currents , 1966 .

[7]  J. P. Downing,et al.  Simple physical model for the injection efficiency of diffused pn-junctions , 1968 .

[8]  H. C. Poon,et al.  High injection in epitaxial transistors , 1969 .

[9]  J. R. Hauser,et al.  The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries , 1964 .

[10]  C. T. Kirk,et al.  A theory of transistor cutoff frequency (fT) falloff at high current densities , 1962, IRE Transactions on Electron Devices.

[11]  H. Gummel.  A self-consistent iterative scheme for one-dimensional steady state transistor calculations , 1964 .

[12]  W. M. Webster.  On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current , 1954, Proceedings of the IRE.

[13]  D. Tremere,et al.  Current gain and cutoff frequency falloff at high currents , 1969 .

[14]  H. D. Man,et al.  The influence of heavy doping on the emitter efficiency of a bipolar transistor , 1971 .

[15]  J. Gillis,et al.  Matrix Iterative Analysis , 1961 .

[16]  J. Slotboom,et al.  Computer-aided two-dimensional analysis of bipolar transistors , 1973 .

[17]  J. L. Wirth,et al.  The Analysis of Radiation Effects in Semiconductor Junction Devices , 1967 .

[18]  H. H. Heimeier.  A two-dimensional numerical analysis of a silicon N-P-N transistor , 1973 .

[19]  N. H. Fletcher,et al.  Some Aspects of the Design of Power Transistors , 1955, Proceedings of the IRE.