论文信息 - Multi-beam mask writer, MBM-2000

Multi-beam mask writer, MBM-2000

A multi-beam mask writer, MBM-2000 is developed for the N3 semiconductor production. It is designed to accomplish high throughput with 16-nm beam and large current density 2.5 A/cm2. It is equipped with curve data format MBF2.0 to allow writing of small curve patterns in EUV masks and curvilinear OPC patterns in optical masks. To improve patterning resolution, pixel-level dose correction (PLDC) is implemented which corrects and enhances profile of dose deposited in resist. Writing tests have proven the global position accuracy that meets MBM-2000’s specification and the effectiveness of fidelity improvement function of PLDC.

Noriaki Nakayamada | Hiroshi Matsumoto | Hayato Kimura | Keisuke Yamaguchi

[1] Yasushi Takahashi,et al. Fast Electron Beam Lithography System with 1024 Beams Individually Controlled by Blanking Aperture Array , 1993 .

[2] Kenichi Saito,et al. Electron beam mask writer EBM-9500 for logic 7nm node generation , 2016, Photomask Technology.

[3] Elmar Platzgummer,et al. eMET: 50 keV electron multibeam mask exposure tool , 2011, Advanced Lithography.

[4] Noriaki Nakayamada,et al. GPU-accelerated inline linearity correction: pixel-level dose correction (PLDC) for the MBM-1000 , 2017, Photomask Japan.

[5] Hideo Inoue,et al. High-Accuracy Proximity Effect Correction for Mask Writing , 2007 .

[6] Seiichi Tsuchiya,et al. Global Critical Dimension Correction: I. Fogging Effect Correction , 2007 .