Au-Sn SLID Bonding: A Reliable HT Interconnect and Die Attach Technology

Au-Sn solid–liquid interdiffusion (SLID) bonding is an established reliable high temperature (HT) die attach and interconnect technology. This article presents the life cycle of an optimized HT Au-Sn SLID bond, from fabrication, via thermal treatment, to mechanical rupture. The layered structure of a strong and uniform virgin bond was identified by X-ray diffraction to be Au/ζ (Au0.85Sn0.15)/Au. During HT exposure, it was transformed to Au/β (Au1.8Sn0.2)/Au. After HT exposure, the die shear strength was reduced by 50 pct, from 14 Pa to 70 MPa, which is still remarkably high. Fractographic studies revealed a change in fracture mode; it was changed from a combination of adhesive Au/Ni and cohesive SiC fracture to a cohesive β-phase fracture. Design rules for high quality Au-Sn SLID bonds are given.

[1]  Jau-Ho Jean,et al.  Effects of Silver‐Paste Formulation on Camber Development during the Cofiring of a Silver‐Based, Low‐Temperature‐Cofired Ceramic Package , 2005 .

[2]  Y. Yagi,et al.  Development of Bi-base high-temperature Pb-free solders with second-phase dispersion: Thermodynamic calculation, microstructure, and interfacial reaction , 2006 .

[3]  Y. Lai,et al.  Nanoindentation identifications of mechanical properties of Cu6Sn5, Cu3Sn, and Ni3Sn4 intermetallic compounds derived by diffusion couples , 2008 .

[4]  Konstantin Vassilevski,et al.  Prospects for SiC electronics and sensors , 2008 .

[5]  M. Melloch,et al.  Status and prospects for SiC power MOSFETs , 2002 .

[6]  M. Wołcyrz,et al.  X-ray investigation of thermal expansion and atomic thermal vibrations of tin, indium, and their alloys , 1981 .

[7]  Guo-Quan Lu,et al.  Low-Temperature Sintered Nanoscale Silver as a Novel Semiconductor Device-Metallized Substrate Interconnect Material , 2006, IEEE Transactions on Components and Packaging Technologies.

[8]  Ping Zheng,et al.  High Temperature Electronics Packaging Processes and Materials Development , 2010 .

[9]  R. Johnson,et al.  Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review , 1996 .

[10]  S. Yamaguchi,et al.  An Ordered Structure of Au 5 Sn , 1974 .

[11]  F. Wang,et al.  Survey on High-Temperature Packaging Materials for SiC-Based Power Electronics Modules , 2007, 2007 IEEE Power Electronics Specialists Conference.

[12]  A. Larsson,et al.  Au-Sn SLID bonding for high temperature applications , 2011 .

[13]  R. Vinci,et al.  Mechanical properties of intermetallic compounds in the Au–Sn system , 2005 .

[14]  M. Nishiguchi,et al.  Highly reliable Au-Sn eutectic bonding with background GaAs LSI chips , 1991 .

[15]  Gabor A. Somorjai,et al.  The surface composition of Au–Sn alloys determined by Auger electron spectroscopy , 1977 .

[16]  H. W. King,et al.  The lattice spacing relationships in close-packed α and ζ phases based on gold , 1960 .

[17]  Christopher Mark Johnson,et al.  Kinetics of Ag3Sn growth in Ag-Sn-Ag system during transient liquid phase soldering process , 2010 .

[18]  O. Løvvik,et al.  Au-Sn SLID Bonding—Properties and Possibilities , 2012, Metallurgical and Materials Transactions B.

[19]  L. Bernstein,et al.  Semiconductor Joining by the Solid‐Liquid‐Interdiffusion (SLID) Process I . The Systems Ag‐In, Au‐In, and Cu‐In , 1966 .

[20]  M. N. Yoder,et al.  Wide bandgap semiconductor materials and devices , 1996 .

[21]  Margaret Nichols Trans , 2015, De-centering queer theory.

[22]  T. Eagar,et al.  Transient Liquid Phase Bonding , 1992 .

[23]  T. Thompson Miner , 2014 .

[24]  Zheng John Shen,et al.  High Temperature, High Power Module Design for Wide Bandgap Semiconductors: Packaging Architecture and Materials Considerations | NIST , 2008 .

[25]  Yi Liu,et al.  Power Device Packaging Technologies for Extreme Environments , 2007, IEEE Transactions on Electronics Packaging Manufacturing.

[26]  W. B. Pearson,et al.  ON THE STRUCTURAL, THERMAL, ELECTRICAL, AND MAGNETIC PROPERTIES OF AuSn , 1963 .

[27]  S. Mannan,et al.  Materials and processes for implementing high-temperature liquid interconnects , 2004, IEEE Transactions on Advanced Packaging.

[28]  G. G. Stokes "J." , 1890, The New Yale Book of Quotations.

[29]  J. W. Palmour,et al.  SiC microwave power technologies , 2002, Proc. IEEE.

[30]  Sabine Penka,et al.  Microcontacts with sub-30µm pitch for 3D chip-on-chip integration , 2006 .

[31]  Chin C. Lee,et al.  Advances in Bonding Technology for Electronic Packaging , 1993 .

[32]  O. Bunk,et al.  Simulating X-ray diffraction of textured films , 2008 .

[33]  R. Wayne Johnson,et al.  Thin Film Multichip Packaging for High Temperature Digital Electronics , 2011 .

[34]  Chin C. Lee,et al.  AuSn alloy phase diagram and properties related to its use as a bonding medium , 1993 .

[35]  A. P. Gonçalves,et al.  Isothermal section of the CeAuSb system at 870 K , 2009 .

[36]  Chin C. Lee,et al.  Void-free Au-Sn eutectic bonding of GaAs dice and its characterization using scanning acoustic microscopy , 1989 .

[37]  T. Ichikawa X-Ray Photoemission Study of the Liquid AuSn Alloy , 1975 .

[38]  R. Johnson,et al.  Metallurgy for SiC Die Attach for Operation at 500°C , 2010 .

[39]  F. G. Yost,et al.  Thermal expansion and elastic properties of high gold-Tin Alloys , 1990 .

[40]  G. Matijasevic,et al.  Void free bonding of large silicon dice using gold-tin alloys , 1990 .

[41]  K. Cheong,et al.  A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices , 2010 .