论文信息 - Transferred-electron domains in In0.53Ga0.47As in dependence on the the nl product

Transferred-electron domains in In0.53Ga0.47As in dependence on the the nl product

Abstract The current drop in planar Gunn devices made of epitaxially grown In0.53Ga0.47As in dependence on the nl product has been investigated. These measurements are compared with a theoretical model taking the field distribution into account, calculated by the method of finite differences. The peak velocity is determined for different carrier concentrations.

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