Resistance uniformity of TiO2 memristor with different thin film thickness

Resistance uniformities of Au/TiO2/Au memristors with oxide layer of 20-nm-thick, 30-nm-thick and 40-nm-thick have been study respectively. For each device, uniformity of high resistances is much higher than that of low resistances in cycles, no matter how thickness the oxide layer is. It indicates that conductive filaments based on oxygen vacancies are the dominated effect on resistive switching. Furthermore, the high resistances of device with 40-nm-thick oxide layer have the worst uniformity in cycles but the best uniformity between devices, which is due to the random rupture of conductive filaments in reset process and parameter fluctuations of fabrication process respectively.

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