Novel devices based on the combination of nitride and II–VI materials

We demonstrate the direct wafer bonding of GaN and ZnSe‐based materials. We report on the structural, optical, and electrical characteristics of InGaN/GaN light‐emitting diodes (LEDs) and ZnSe‐based II–VI materials combined by direct wafer bonding. Reflectivity, transmission electron microscopy (TEM), and current–voltage (I –V ) measurements were performed. The bonded sample exhibited a higher reflectivity at the wavelength of 510 nm than a control LED with an Al cap. Cross‐sectional TEM revealed a uniform wafer‐bonded interface with no voids or cavities for the low temperature sample, while the sample bonded at a higher temperature was observed to have lens‐shaped cavities at semiconductor interfaces. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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