High voltage semiconductor technologies

High voltage semiconductor devices continue to play a major role in modern megawatt power systems especially in the fields of traction, transmission and distribution (T&D) and industrial applications. The main development trend of power devices has always been focused on increasing the power ratings while improving the over all device performance in terms of reduced losses, increased robustness, better controllability and reliable behavior under normal and fault conditions. This paper will focus on the main two high voltage turn-off device concepts, namely the IGCT and IGBT. Recent device developments and future trends will be discussed to provide the power electronics community of what can be expected in the coming years from the power device performance viewpoint.

[1]  S. Linder,et al.  Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

[2]  I. Nistor,et al.  An IGCT chip set for 7.2 kV (RMS) VSI application , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

[3]  U. Schlapbach,et al.  Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[4]  U. Schlapbach,et al.  A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

[5]  U. Schlapbach,et al.  An assessment of modern IGBT and anti-parallel diode behaviour in hard-switching applications , 2005, 2005 European Conference on Power Electronics and Applications.

[6]  Mark Frecker,et al.  The Integrated Gate-Commutated Thyristor: A New High-Efficiency, High- Power Switch for Series or Snubberless Operation , 1997 .

[7]  D. Cottet,et al.  The Corrugated P-Base IGCT - a New Benchmark for Large Area SQA Scaling , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

[8]  U. Schlapbach,et al.  New plasma shaping technology for optimal high voltage diode performance , 2007, 2007 European Conference on Power Electronics and Applications.

[9]  M. Rahimo,et al.  The Radiation Enhanced Diffusion (RED) Diode realization of a large area p+p-n-n+ structure with high SOA , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

[10]  U. Schlapbach,et al.  Realization of higher output power capability with the Bi-mode Insulated Gate Transistor (BIGT) , 2009, 2009 13th European Conference on Power Electronics and Applications.