Design optimization and testing of a GaAs switched-capacitor filter

The design of GaAs MESFET technology is discussed. The design techniques developed are illustrated by means of a second-order switched-capacitor bandpass filter designed to operate at a switching frequency of 500 MHz. The design incorporates an operational amplifier architecture with a simulated gain of 60 dB and a switch driver circuit. Amplifiers are characterized in terms of settling time performance, and a general procedure for optimization of the switched-capacitor circuit to maximize switching frequency is presented. Measurements on a fabricated chip confirm the design of the filter and its components. >

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