193-nm lithography on a full-field scanner

In this paper, the lithographic performance of advanced 193 nm resist materials has been evaluated on a full field step and scan system. Single layer and bi-layer resist processes are compared in terms of performance and complexity. Optimization of illumination conditions is investigated as a way to enlarge processing windows and to reduce iso-dense bias. The application of a PSM illustrates the extendibility of 193 nm lithography for the 100- nm technology node.