论文信息 - Atomic layer growth of TiO2 on silica

Atomic layer growth of TiO2 on silica

Abstract Study was made of the initial stages of TiO2 on porous high-surface-area silica support by atomic layer epitaxy (ALE). The effects of the number and types of surface bonding sites and the reaction temperature on the growth rate and structure of TiO2 were determined. The reactants were TiCl4 and H2O. At 175°C binding of TiCl4 takes place to one or to two hydroxyl groups, but at 450°C only to two isolated hydroxyl groups. The number and type of binding sites available and the reaction temperature selected determine how the growth will proceed. XRD peaks at the 2θ values of anatase and rutile were detected after one reaction cycle of TiCl4 and H2O at 450°C.

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