Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers
暂无分享,去创建一个
[1] M. Sturge. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV , 1962 .
[2] J. P. van der Ziel,et al. Self-focusing effects in pulsating Al x Ga 1-x As double-heterostructure lasers , 1981 .
[3] E. M. Lifshitz,et al. Electrodynamics of continuous media , 1961 .
[4] Charles Howard Henry,et al. Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers , 1980 .
[5] W. Tsang,et al. Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy , 1980 .
[6] G. Thompson,et al. Effect of injection current on the dielectric constant of an inbuilt waveguide in twin-transverse-junction stripe lasers , 1979 .
[7] H. Casey,et al. Heterostructure lasers , 1978 .
[8] P. Asbeck. Self‐absorption effects on the radiative lifetime in GaAs‐GaAlAs double heterostructures , 1977 .
[9] J. P. van der Ziel,et al. Spectral broadening of pulsating AlxGa1-xAs double heterostructure lasers , 1979 .
[10] H. C. Casey,et al. Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV , 1975 .
[11] G. Thompson,et al. A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected carrier density , 1972 .
[12] Measurement of spectrum, bias dependence, and intensity of spontaneous emission in GaAs lasers , 1981 .
[13] Roy Lang. Intensity Pulsation Enhancement by Self-Focusing in Semiconductor Injection Lasers , 1980 .
[14] R. Lang,et al. Lateral transverse mode instability and its stabilization in stripe geometry injection lasers , 1979 .