论文信息 - Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation

Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation

The authors report an all solid state, VLSI compatible, electroluminescent device based on porous silicon with an external quantum efficiency greater than 0.1% under CW operation. The emission, which is broadband and peaks at 600 nm, is detected above a low threshold current density and voltage of 0.01 Am-2 and 2.3 V, respectively.

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