论文信息 - Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

Arrays of coherent InSb quantum dots (QDs) have been fabricated by liquid-phase epitaxy on InAs substrates in the temperature range T = 420–450°C. The QDs with a density of (0.9−2) × 1010 cm−2 were 3 nm high and 13 nm in diameter. A bimodal QD size distribution was observed, which was accounted for by a combined growth mechanism of these nanoobjects. Structural characteristics of a separate InSb QD formed on the InAs surface were studied for the first time by atomic-force and transmission electron microscopies. Moire fringes were observed for the first time for QDs in the InSb/InAs system, with the moire period of 3.5 nm corresponding to InSb QDs without an admixture of arsenic.

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