论文信息 - A 108 GHz GaAs MHEMT VCO MMIC

A 108 GHz GaAs MHEMT VCO MMIC

Abstract-A W-Band VCO MMIC is first time reported in this paper in China, To eliminate the parasitic resistance of the oscillator loop, this chip utilizes the source capacitive feedback forming the negative resistance. Through the reasonable output matching network, the chip also realize the frequency start-up condition and restrain the output harmonic. Finally, Fabricated by the NEDI's 0.15um GaAs MHEMT technology, the mmic typically oscillates at the 108GHz and ranges from 106.8GHz to 108.4GHz, voltage-controlled-bandwidth and typical output power achieves 1.6 GHz and −8.5dBm respectively.

[1] A. Gutierrez-Aitken,et al. A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth , 1999, IEEE J. Solid State Circuits.

[2] A. Leuther,et al. A PLL-Stabilized W-Band MHEMT Push-Push VCO with Integrated Frequency Divider Circuit , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[3] H. Goronkin,et al. Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application , 2002, IMS 2002.

[4] Inder J. Bahl,et al. Microwave Solid State Circuit Design , 1988 .

[5] Kyounghoon Yang,et al. Low DC-power Ku-band RTD VCO based on an InP monolithic RTD/HBT technology , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..