Impact ionization in semiconductors under the influence of the electric field of an optical wave

The electron-hole pair generation was observed in a semiconductor by light of photon energy much (tens of times) less than the band gap of the semiconductor. Luminescence of n-type InSb was observed experimentally in the fundamental absorption region as a result of excitation with light of the wavelength il = 90.55 p . Generation of electron-hole pairs was due to impact ionization caused by electrons (or holes) in the field of a high-power optical wave. A study was made of the field, frequency, and carrier-density dependences of the number of nonequilibrium carriers. Theoretical calculations were made and the results of these calculations agreed well with the experimental data.