High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation
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Rui Zhang | S. Takagi | M. Takenaka | N. Taoka | M. Takenaka | S. Takagi | Rui Zhang | Po-Chin Huang | N. Taoka | Ju-Chin Lin | Po-Chin Huang | Ju-Chin Lin
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