Origin of large‐amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation

The random telegraph signal (RTS) with a relative amplitude of up to 100% has been observed in the forward and reverse base current in polycrystalline emitter bipolar junction transistors after hot carrier degradation. The RTS is explained by modulations in the surface generation‐recombination rate due to fluctuations in the capture cross section of two‐state interface centers. Carrier trapping/emission on slow oxide traps and/or defect reconfiguration are assumed to be responsible for the cross‐section fluctuations