Total dose effects on bipolar integrated circuits: characterization of the saturation region

The total-dose response of bipolar microcircuits is investigated. A recovery of the degradation is observed for high total dose in the saturation region. The circuit response in this region is studied based on room temperature annealing. The role of the electric field is studied and the results are discussed in terms of hardness assurance.

[1]  J. R. Brews,et al.  The determination of Si-SiO/sub 2/ interface trap density in irradiated four-terminal VDMOSFETs using charge pumping , 1996 .

[2]  E. W. Enlow,et al.  Response of advanced bipolar processes to ionizing radiation , 1991 .

[3]  R. L. Pease,et al.  Gain degradation of lateral and substrate pnp bipolar junction transistors , 1996 .

[4]  Allan H. Johnston,et al.  Enhanced damage in linear bipolar integrated circuits at low dose rate , 1995 .

[5]  T. P. Ma,et al.  Ionizing radiation effects in MOS devices and circuits , 1989 .

[6]  Daniel M. Fleetwood,et al.  Predicting switched-bias response from steady-state irradiations MOS transistors , 1990 .

[7]  H. E. Boesch,et al.  The nature of the trapped hole annealing process , 1989 .

[8]  F. Saigne,et al.  Effect of switching from high to low dose rate on linear bipolar technology radiation response , 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

[9]  Ronald D. Schrimpf,et al.  Physical model for enhanced interface-trap formation at low dose rates , 2002 .

[10]  D. Fleetwood,et al.  Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices , 1992 .

[11]  Arthur R. Hart,et al.  Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures , 1978, IEEE Transactions on Nuclear Science.

[12]  James M. Puhl,et al.  ACCELERATED TESTS FOR SIMULATING LOW DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS , 1996 .

[13]  peixiong zhao,et al.  Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates , 1994 .

[14]  R. L. Pease,et al.  Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response , 1999 .

[15]  R. L. Pease,et al.  Origins of total-dose response variability in linear bipolar microcircuits , 2000 .

[16]  R. L. Pease,et al.  Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs , 1995 .

[17]  R. L. Pease,et al.  Trends in the total-dose response of modern bipolar transistors , 1992 .

[18]  Daniel M. Fleetwood,et al.  Radiation‐induced charge neutralization and interface‐trap buildup in metal‐oxide‐semiconductor devices , 1990 .