A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/access, ultra low leakage power memory using dynamic cell stability and a dual swing data link
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[1] A.P. Chandrakasan,et al. A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy , 2008, IEEE Journal of Solid-State Circuits.
[2] A.P. Chandrakasan,et al. A reconfigurable 65nm SRAM achieving voltage scalability from 0.25–1.2V and performance scalability from 20kHz–200MHz , 2008, ESSCIRC 2008 - 34th European Solid-State Circuits Conference.
[3] T. Sasaki,et al. A 0.7 V Single-Supply SRAM With 0.495 $\mu$m$^{2}$ Cell in 65 nm Technology Utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme , 2009, IEEE Journal of Solid-State Circuits.
[4] Francky Catthoor,et al. A 4.4pJ/access 80MHz, 2K word } 64b memory with write masking feature and variability resilient multi-sized sense amplifier redundancy for wireless sensor nodes applications , 2010, 2010 Proceedings of ESSCIRC.
[5] W. Dehaene,et al. A 3.6pJ/access 480MHz, 128Kbit on-Chip SRAM with 850MHz boost mode in 90nm CMOS with tunable sense amplifiers to cope with variability , 2008, ESSCIRC 2008 - 34th European Solid-State Circuits Conference.
[6] Hugo De Man,et al. A systematic methodology for the application of data transfer and storage optimizing code transformations for power consumption and execution time reduction in realizations of multimedia algorithms on programmable processors , 2002, IEEE Trans. Very Large Scale Integr. Syst..
[7] Wim Dehaene,et al. A Low Power Embedded SRAM for Wireless Applications , 2006 .
[8] Mladen Berekovic,et al. Ultra Low Power ASIP Design for Wireless Sensor Nodes , 2007, 2007 14th IEEE International Conference on Electronics, Circuits and Systems.
[9] M. Usami,et al. A 1.8 ns access, 550 MHz 4.5 Mb CMOS SRAM , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).