Vth variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node
暂无分享,去创建一个
G. Bersuker | R. Jammy | P. Majhi | J. Chen | B. Sassman | J. Huang | S.K. Banerjee | G. Bersuker | P. Kirsch | W. Loh | C. Kang | P. Majhi | R. Jammy | H. Tseng | J. Huang | C. Park | C. Young | D. Heh | P. Hung | B. Min | B. Wu | S. Mccoy | C. Young | D. Heh | H.-H. Tseng | S.K. Banerjee | W.-Y. Loh | P.Y. Hung | C.-Y. Kang | S.-H. Lee | J. Oh | B. Wu | P.D. Kirsch | S. McCoy | J. Oh | B.-G. Min | C.-S. Park | G. Moori | B. Sassman | S. Lee | J. Chen | G. Moori