Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating

We demonstrate narrow-line green laser emission at 513.85 nm with a linewidth of 31 pm and side-mode suppression ratio of 36.9 dB, operating under continuous-wave injection at room temperature. A high-order (40th) distributed-feedback surface grating fabricated on multimode InGaN-based green laser diodes via a focused ion beam produces resolution-limited, single-mode lasing with an optical power of 14 mW, lasing threshold of 7.27 kA cm−2, and maximum slope efficiency of 0.32 W A−1. Our realization of narrow-line green laser diodes opens a pathway toward efficient optical communications, sensing, and atomic clocks.

[1]  Chung-En Zah,et al.  Gallium Indium Nitride-Based Green Lasers , 2012, Journal of Lightwave Technology.

[2]  L. Coldren,et al.  Diode Lasers and Photonic Integrated Circuits: Coldren/Diode Lasers 2E , 2012 .

[3]  P. Kaczmarek,et al.  Laser Doppler vibrometry with a single-frequency microchip green laser , 2011 .

[4]  T. Mukai,et al.  First-Order AlInGaN 405 nm Distributed Feedback Laser Diodes by Current Injection , 2006 .

[5]  Nong Chen,et al.  InGaAsP/InP Laterally Coupled Distributed Feedback Ridge Laser , 2000 .

[6]  Shigehisa Arai,et al.  1.5-µm-Wavelength Distributed Feedback Lasers with Deeply Etched First-Order Vertical Grating , 2001 .

[7]  Jonathan J. Wierer,et al.  Advantages of III‐nitride laser diodes in solid‐state lighting , 2015 .

[8]  Alfred Lell,et al.  Laterally Coupled InGaN/GaN DFB Laser Diodes , 2002 .

[9]  Amit Yadav,et al.  InGaN/GaN Laser Diodes With High Order Notched Gratings , 2017, IEEE Photonics Technology Letters.

[10]  K. Tada,et al.  Fabrication and characteristics of gain-coupled distributed feedback semiconductor lasers with a corrugated active layer , 1991 .

[11]  A. Forchel,et al.  High-resolution patterning and characterization of optically pumped first-order GaN DFB lasers , 2000 .

[12]  Anthony E. Kelly,et al.  InGaN/GaN Distributed Feedback Laser Diodes With Deeply Etched Sidewall Gratings , 2016, IEEE Photonics Technology Letters.

[13]  Daniel Hofstetter,et al.  Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser , 1998 .

[14]  G. M. Smith,et al.  InGaAs-GaAs-AlGaAs strained-layer distributed feedback ridge waveguide quantum well heterostructure laser array , 1991 .

[15]  Amit Yadav,et al.  Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings , 2018, Applied Physics Express.

[16]  D. Scifres,et al.  Distributed‐feedback single heterojunction GaAs diode laser , 1974 .

[17]  J. Carroll,et al.  Distributed feedback semiconductor lasers , 1998 .

[18]  M. Kneissl,et al.  Structural and optical properties of epitaxially overgrown third-order gratings for InGaN/GaN-based distributed feedback lasers , 1998 .

[19]  V. Härle,et al.  REALIZATION OF OPTICALLY PUMPED SECOND-ORDER GAINN-DISTRIBUTED-FEEDBACK LASERS , 1996 .

[20]  F Durst,et al.  Focusing of diode laser beams: a simple mathematical model. , 1990, Applied optics.

[21]  J.S. Roberts,et al.  Single-mode operation of a surface grating distributed feedback GaAs-AlGaAs laser with variable-width waveguide , 1995, IEEE Photonics Technology Letters.

[22]  Jun Ye,et al.  Optical atomic clocks , 2014, 1407.3493.

[23]  Daniel Hofstetter,et al.  Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser , 2000 .

[24]  Takashi Miyoshi,et al.  510–515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate , 2009 .

[25]  L. Coldren,et al.  Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings , 1999 .

[26]  S. Lutgen,et al.  True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on c-Plane GaN , 2010 .

[27]  M. Weyers,et al.  Design and realization of high-power DFB lasers , 2004, SPIE Optics East.

[28]  B. Corbett,et al.  Analysis of Slot Characteristics in Slotted Single-Mode Semiconductor Lasers Using the 2-D Scattering Matrix Method , 2006, IEEE Photonics Technology Letters.

[29]  K. Kishino,et al.  660 nm wavelength GaInAsP/AlGaAs distributed feedback lasers , 1988 .

[30]  Sven Einfeldt,et al.  DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings , 2018, IEEE Photonics Technology Letters.

[31]  Osamu Mikami,et al.  1.55 µm GaInAsP/InP Distributed Feedback Lasers , 1981 .

[32]  K. Katayama,et al.  531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {202̄1} Free-Standing GaN Substrates , 2009 .

[33]  Changzheng Sun,et al.  1.55-/spl mu/m AlGaInAs-InP laterally coupled distributed feedback laser , 2005 .