InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands

A material system utilizing InGaAs/InP quantum wells (QWs) and InAs islands to create strain-induced quantum dots (SIQDs) is introduced. The SIQDs are fabricated in situ by growing self-organized stressor-islands on top of a near-surface QW. The confinement of carriers in the SIQDs is studied by photoluminescence. Emission peak from the SIQD ground state transition is redshifted by 64 meV from the quantum well peak. Low-temperature luminescence from the SIQD is observed around 0.8 eV (1.55 µm). Altogether, four SIQD states are identified having a level splitting of 15 meV.