论文信息 - The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory - 字舞流文

The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory

Se-Ho Lee | C. Hwang | Jong-Ho Lee | H. Kim | G. Kim | S. Kim | Y. Ahn | S. Ryu | C. Kim | B. Yang