论文信息 - High speed selfaligned GaInP/GaAs HBBTs

High speed selfaligned GaInP/GaAs HBBTs

High speed selfaligned Ga/sub 0.5/In/sub 0.5/P/GaAs hole barrier bipolar transistors (HBBTs) with a 60 nm carbon doped base layer (p=6.5*10/sup 19/ cm/sup -3/) and a 20 nm undoped GaInP barrier have been fabricated. The devices show maximum small signal current gains around 30, independent of emitter size. A current gain cutoff frequency of f/sub T/=95 GHz and power gain cutoff frequency of f/sub max/=110 GHz are reported for 1.5*10 mu m/sup 2/ and 2*1.5*10 mu m/sup 2/ devices, respectively. These results represent the best microwave performance yet reported for Ga/sub 0.5/In/sub 0.5/P/GaAs based HBTs. >

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