Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide
暂无分享,去创建一个
M. Dudley | S. Sampayan | B. Raghothamachar | Hongyu Peng | Zeyu Chen | K. Sampayan | Ya Fei Liu | Q. Cheng | S. Hu | James Watson
[1] G. Caporaso,et al. Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties , 2021, Scientific Reports.
[2] Wenguang,et al. Electron , 2020, Definitions.
[3] P. Wellmann. Review of SiC crystal growth technology , 2018, Semiconductor Science and Technology.
[4] Hoang T. Nguyen,et al. High Voltage Wide Bandgap Photoconductive Switching , 2015 .
[5] Stephen E. Saddow,et al. 4H–SiC photoconductive switching devices for use in high-power applications , 2003 .
[6] Jan Linnros,et al. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias , 2002 .
[7] Michael Dudley,et al. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties , 1999 .
[8] S. Saddow,et al. Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devices , 1995 .
[9] P. Neudeck,et al. Performance limiting micropipe defects in silicon carbide wafers , 1994, IEEE Electron Device Letters.
[10] W. C. Nunnally,et al. 80-MW photoconductor power switch , 1984 .